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| STGP7NB120SD N-CHANNEL 7A - 1200V - TO-220 PowerMESHTM IGBT TYPE STGP7NB120SD s s s s VCES 1200 V VCE(sat) < 2.1 V IC 7A HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) VERY LOW ON-VOLTAGE DROP (Vcesat) OFF LOSSES INCLUDE TAIL CURRENT HIGH CURRENT CAPABILITY 1 3 2 DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESHTM IGBTs, with outstanding performances. The suffix "S" identifies a family optimized achieve minimum on-voltage drop for low frequency applications (<1kHz). TO-220 INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s MOTOR CONTROL s LIGHT DIMMER s INTRUSH CURRENT LIMITATION ABSOLUTE MAXIMUM RATINGS Symbol VCES VECR VGE IC IC ICM ( ) PTOT Tstg Tj Parameter Collector-Emitter Voltage (VGS = 0) Reverse Battery Protection Gate-Emitter Voltage Collector Current (continuous) at TC = 25C Collector Current (continuous) at TC = 100C Collector Current (pulsed) Total Dissipation at TC = 25C Derating Factor Storage Temperature Max. Operating Junction Temperature Value 1200 20 20 10 7 20 90 0.7 -65 to 150 150 Unit V V V A A A W W/C C C (q ) Pulse width limited by safe operating area November 2002 1/8 STGP7NB120SD THERMAL DATA Rthj-case Rthj-amb Rthc-h Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-heatsink Typ 1.38 62.5 0.5 C/W C/W C/W ELECTRICAL CHARACTERISTICS (TCASE = 25 C UNLESS OTHERWISE SPECIFIED) OFF Symbol VBR(CES) VBR(ECR) ICES IGES Parameter Collector-Emitter Breakdown Voltage Emitter-Collector Breakdown Voltage Collector cut-off (VGE = 0) Gate-Emitter Leakage Current (VCE = 0) Test Conditions IC = 250 A, VGE = 0 IC = 10mA, VGE = 0 VCE = Max Rating, TC = 25 C VCE = Max Rating, TC = 125 C VGE = 20V , VCE = 0 Min. 1200 20 50 250 100 Typ. Max. Unit V V A A nA ON (1) Symbol VGE(th) VCE(sat) Parameter Gate Threshold Voltage Collector-Emitter Saturation Voltage Test Conditions VCE = VGE, IC = 250A VGE = 15V, VGE = 15V, VGE = 15V, IC = 3.5 A IC = 7 A IC = 10 A Min. 3 Typ. Max. 5 1.6 2.1 1.7 Unit V V V V DYNAMIC Symbol gfs Cies Coes Cres Qg ICL Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Charge Latching Current Test Conditions VCE = 25 V , IC =7 A VCE = 25V, f = 1 MHz, VGE = 0 Min. 2.5 Typ. 4.5 430 40 7 29 10 Max. Unit S pF pF pF nC A VCE = 960V, IC = 7 A, VGE = 15V Vclamp = 960V , Tj = 150C RG = 1K SWITCHING ON Symbol td(on) tr (di/dt)on Eon Parameter Turn-on Delay Time Rise Time Turn-on Current Slope Turn-on Switching Losses Test Conditions VCC = 960 V, IC = 7 A RG = 1K , VGE = 15 V VCC= 960 V, IC = 7 A, RG=1K VGE = 15 V, Tj = 125C Min. Typ. 570 270 800 3.2 Max. Unit ns ns A/s mJ 2/8 STGP7NB120SD ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING OFF Symbol tc tr(Voff) tf Eoff(**) tc tr(Voff) tf Eoff(**) Parameter Cross-over Time Off Voltage Rise Time Fall Time Turn-off Switching Loss Cross-over Time Off Voltage Rise Time Fall Time Turn-off Switching Loss Vcc = 960 V, IC = 7 A, RGE = 1K , VGE = 15 V Tj = 125 C Test Conditions Vcc = 960 V, IC = 7 A, RGE = 1K , VGE = 15 V Min. Typ. 4.9 2.9 3.3 15 7.5 5.5 6.2 22 Max. Unit s s s mJ s s s mJ COLLECTOR-EMITTER DIODE Symbol If Ifm Vf trr Qrr Irrm Parameter Forward Current Forward Current pulsed Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current If =3.5 A If = 3.5 A, Tj = 125 C If = 3.5 A ,VR = 600 V, Tj =125C, di/dt = 100A/s 1.7 1.5 190 850 9 Test Conditions Min. Typ. Max. 3.5 28 2.0 Unit A A V V ns nC A Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. 2. Pulse width limited by max. junction temperature. (**)Losses include Also the Tail (Jedec Standardization) 3/8 STGP7NB120SD Thermal Impedance Turn-Off Energy Losses vs Temperature Output Characteristics Transfer Characteristics Normalized Gate Threshold Voltage vs Temp. Transconductance 4/8 STGP7NB120SD Collector-Emitter On Voltage vs Temperature Gate-Charge vs Gate-Emitter Voltage Capacitance Variations Diode Forward Voltage Collector-Emitter On Voltage vs Collector Current 5/8 STGP7NB120SD Fig. 1: Gate Charge test Circuit Fig. 2: Test Circuit For Inductive Load Switching 6/8 STGP7NB120SD TO-220 MECHANICAL DATA DIM. MIN. A C D D1 E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 DIA. 13.0 2.65 15.25 6.2 3.5 3.75 0.49 0.61 1.14 1.14 4.95 2.4 10.0 16.4 14.0 2.95 15.75 6.6 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 4.40 1.23 2.40 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.645 0.551 0.116 0.620 0.260 0.154 0.151 mm TYP. MAX. 4.60 1.32 2.72 MIN. 0.173 0.048 0.094 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 inch TYP. MAX. 0.181 0.051 0.107 A C D1 L2 D F1 G1 E Dia. L5 L7 L6 L4 P011C L9 F2 F G H2 7/8 STGP7NB120SD Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. (c) The ST logo is a registered trademark of STMicroelectronics (c) 2002 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. (c) http://www.st.com 8/8 |
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